16Mb: 3V Embedded Parallel NOR Flash
Features
Parallel NOR Flash Embedded Memory
M29W160ET, M29W160EB
Features
• Common Flash interface
– 64-bit security code
• Low power consumption: Standby and automatic
mode
• 100,000 PROGRAM/ERASE cycles per block
• Electronic signature
– Manufacturer code: 0020h
– Top device code M29W160ET: 22C4h
– Bottom device code M29W160EB: 2249h
• Packages
– 48-pin TSOP (N) 12mm x 20mm
– 48-ball TFBGA (ZA) 6mm x 8mm
– 64-ball FBGA (ZS) 11mm x 13mm
• Automotive grade parts available
• Supply voltage
– VCC = 2.7–3.6V (program, erase, read)
• Access times
– 70, 90ns
• Program time
– 10µs per byte/word (TYP)
• Memory organization
– 3 parameter and 31 main blocks
– 1 boot block (top or bottom location)
• Program/erase controller
– Embedded byte/word program algorithms
• Erase suspend and resume capability
– Read or program another block during an ERASE
SUSPEND operation
• UNLOCK BYPASS PROGRAM COMMAND
– Fast buffered/batch programming
• Temporary block unprotect mode
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
16Mb: 3V Embedded Parallel NOR Flash
Features
Part Numbering Information
Devices are shipped from the factory with memory content bits erased to 1. For available options, such as packages or speed, or for further information, contact your Micron sales representative. Part numbers can be verified at
www.micron.com. Feature and specification comparison by device type is available at www.micron.com/products.
Contact the factory for devices not found.
Table 1: Part Number Information
Part Number
Category
Category Details
Device Type
M29 = Parallel Flash memory
Operating Voltage
W = 2.7 to 3.6V
Device function
160E = 16Mb memory array
Configuration
T = Top boot
B = Bottom boot
Speed
7A = 70ns
Package
Notes
1
70 = 70 ns
2
80 = 80ns
3
90 = 90ns
4
N = 48-pin TSOP, 12mm x 20mm
ZA = 48-ball TFBGA, 6mm x 8mm, 0.80mm pitch
ZS = 64-ball Fortified BGA, 11mm x 13mm, 1mm pitch
Temperature Range
6 = –40° to 85°C
3 = –40°C to 125°C
Voltage Extension
Blank = Standard option
S = VCC,min extension to 2.5V of VCC and available only with 80ns speed class option
Shipping Options
Blank = Standard packing
T = Tape and reel packing
E = RoHS-compliant package, standard packing
F = RoHS-compliant package, tape and reel packing
Notes:
1. Device speed in conjunction with temperature range = 6 to denote automotive grade (–40° to 85°C) parts.
2. Device speed in conjunction with temperature range = 6 to denote industrial grade (–40° to 85°C) parts, or
in conjunction with temperature range = 3 to denote automotive grade (–40° to 125°C) parts.
3. Access time, automotive device, in conjunction with temperature range = 3 and voltage extension = S.
4. Device speed in conjunction with temperature range = 6 to denote industrial grade (–40° to 85°C) parts.
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Features
Contents
General Description ......................................................................................................................................... 6
Signal Assignments ........................................................................................................................................... 8
Signal Descriptions ......................................................................................................................................... 11
Memory Organization .................................................................................................................................... 13
Memory Configuration ............................................................................................................................... 13
Memory Map, x8 – 16Mb Density ................................................................................................................ 13
Memory Map, x16 – 16Mb Density .............................................................................................................. 14
Bus Operations ............................................................................................................................................... 15
Read .......................................................................................................................................................... 15
Write .......................................................................................................................................................... 15
Standby and Automatic Standby ................................................................................................................. 15
Output Disable ........................................................................................................................................... 16
Commands .................................................................................................................................................... 16
READ Operations ........................................................................................................................................... 17
READ/RESET Command ............................................................................................................................ 17
READ CFI Command .................................................................................................................................. 17
AUTO SELECT Operations .............................................................................................................................. 18
AUTO SELECT Command ........................................................................................................................... 18
Read Device ID ............................................................................................................................................... 18
Block and Chip Protection .............................................................................................................................. 19
BLOCK PROTECT Command ...................................................................................................................... 19
Block Protection Using Programmer Equipment .......................................................................................... 20
In-System Block Protection ......................................................................................................................... 22
BYPASS Operations ......................................................................................................................................... 24
UNLOCK BYPASS Command ...................................................................................................................... 24
UNLOCK BYPASS RESET Command ............................................................................................................ 24
PROGRAM Operations .................................................................................................................................... 24
PROGRAM Command ................................................................................................................................ 24
UNLOCK BYPASS PROGRAM Command ..................................................................................................... 24
ERASE Operations .......................................................................................................................................... 25
CHIP ERASE Command .............................................................................................................................. 25
BLOCK ERASE Command ........................................................................................................................... 25
ERASE SUSPEND Command ....................................................................................................................... 26
ERASE RESUME Command ........................................................................................................................ 26
Status Register ................................................................................................................................................ 27
Data Polling Bit (DQ7) ................................................................................................................................ 27
Toggle Bit (DQ6) ......................................................................................................................................... 27
Error Bit (DQ5) ........................................................................................................................................... 27
Erase Timer Bit (DQ3) ................................................................................................................................. 28
Alternative Toggle Bit (DQ2) ........................................................................................................................ 28
Absolute Ratings and Operating Conditions ..................................................................................................... 31
DC Characteristics .......................................................................................................................................... 33
Read AC Characteristics .................................................................................................................................. 34
Write AC Characteristics ................................................................................................................................. 36
Program/Erase Characteristics ........................................................................................................................ 40
Reset Characteristics ...................................................................................................................................... 41
Package Dimensions ....................................................................................................................................... 42
Revision History ............................................................................................................................................. 45
Rev. B – 06/13 ............................................................................................................................................. 45
Rev. A – 07/12 ............................................................................................................................................. 45
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Features
List of Figures
Figure 1: Logic Diagram ................................................................................................................................... 7
Figure 2: 48-Pin TSOP 160ET/B ........................................................................................................................ 8
Figure 3: 48-Ball TFBGA 160ET/B ..................................................................................................................... 9
Figure 4: 64-Ball FBGA 160ET/B ..................................................................................................................... 10
Figure 5: Block Protect Flowchart – Programmer Equipment ........................................................................... 20
Figure 6: Chip Unprotect Flowchart – Programmer Equipment ....................................................................... 21
Figure 7: Block Protect Flowchart – In-System Equipment ............................................................................... 22
Figure 8: Chip Protection Flowchart – In-System Equipment ........................................................................... 23
Figure 9: Data Polling Flowchart .................................................................................................................... 29
Figure 10: Data Toggle Flowchart ................................................................................................................... 30
Figure 11: AC Measurement Load Circuit ....................................................................................................... 32
Figure 12: AC Measurement I/O Waveform ..................................................................................................... 32
Figure 13: Random AC Timing ....................................................................................................................... 35
Figure 14: WE#-Controlled AC Timing ............................................................................................................ 37
Figure 15: CE#-Controlled AC Timing ............................................................................................................. 39
Figure 16: Reset/Block Temporary Unprotect AC Waveforms ........................................................................... 41
Figure 17: 48-Pin TSOP – 12mm x 20mm ........................................................................................................ 42
Figure 18: 48-Ball TFBGA – 6mm x 8mm ......................................................................................................... 43
Figure 19: 64-Ball FBGA – 11mm x 13mm ....................................................................................................... 44
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Features
List of Tables
Table 1: Part Number Information ................................................................................................................... 2
Table 2: Signal Names ...................................................................................................................................... 7
Table 3: Signal Descriptions ........................................................................................................................... 11
Table 4: x8 Top Boot, Blocks [34:0] .................................................................................................................. 13
Table 5: x8 Bottom Boot, Blocks [34:0] ............................................................................................................ 13
Table 6: x16 Top Boot, Blocks [34:0] ................................................................................................................ 14
Table 7: x16 Bottom Boot, Blocks [34:0] .......................................................................................................... 14
Table 8: Bus Operations ................................................................................................................................. 15
Table 9: Commands – 16-Bit Mode (BYTE# = V IL) ............................................................................................ 16
Table 10: Commands – 8-Bit Mode (BYTE# = V IL) ............................................................................................ 17
Table 11: Read Electronic Signature ............................................................................................................... 18
Table 12: Block and Chip Protection Signal Settings ........................................................................................ 19
Table 13: Status Register Bits .......................................................................................................................... 28
Table 14: Absolute Maximum/Minimum Ratings ............................................................................................ 31
Table 15: Operating Conditions ...................................................................................................................... 31
Table 16: Input/Output Capacitance .............................................................................................................. 32
Table 17: DC Current Characteristics .............................................................................................................. 33
Table 18: DC Voltage Characteristics .............................................................................................................. 33
Table 19: Read AC Characteristics .................................................................................................................. 34
Table 20: WE#-Controlled Write AC Characteristics ......................................................................................... 36
Table 21: CE#-Controlled Write AC Characteristics ......................................................................................... 38
Table 22: Program/Erase Times and Endurance Cycles ................................................................................... 40
Table 23: Reset/Block Temporary Unprotect AC Characteristics ...................................................................... 41
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
General Description
General Description
The M29W160ET/B (2Mb x8 or 1Mb x16) is a nonvolatile device that can be read, erased
and reprogrammed. These operations can be performed using a single low voltage (2.7–
3.6V) supply. On power-up the memory defaults to read mode where it can be read in
the same way as a ROM or EPROM.
The device is divided into blocks that can be erased independently to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental PROGRAM or ERASE commands from modifying the memory. PROGRAM and
ERASE commands are written to the command interface of the memory. An on-chip
program/erase controller simplifies the process of programming or erasing the memory
by taking care of all of the special operations that are required to update the memory
contents.
The end of a PROGRAM or ERASE operation can be detected and any error conditions
identified. The command set required to control the memory is consistent with JEDEC
standards.
The blocks in the memory are asymmetrically arranged. The first or last 64KB have been
divided into four additional blocks. The 16KB boot block can be used for a small initialization code to start the microprocessor, the two 8 KB parameter blocks can be used for
parameter storage, and the remaining 32KB is a small main block where the application
may be stored.
CE#, OE#, and WE# signals control the bus operation. They enable simple connection to
most microprocessors, often without additional logic.
The device supplied with all the bits erased (set to 1).
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
General Description
Figure 1: Logic Diagram
VCC
15
A[MAX:0]
DQ[14:0]
DQ15/A-1
WE#
CE#
OE#
RY/BY#
RST#
BYTE#
VSS
Table 2: Signal Names
Name
Description
Type
A[19:0]
Address inputs
Input
CE#
Chip enable
Input
OE#
Output enable
Input
WE#
Write enable
Input
Byte/word organization select
Input
Reset/block temporary unprotect
Input
BYTE#
RST#
DQ[7:0]
Data I/O
I/O
DQ[14:8]
Data I/O
I/O
DQ15/A-1
Data I/O or address input
I/O
RY/BY#
Ready/busy output
Output
VCC
Core power supply
Supply
VSS
Ground
Supply
NC
Not connected internally
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
–
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© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Signal Assignments
Signal Assignments
Figure 2: 48-Pin TSOP 160ET/B
A15
A14
A13
A12
A11
A10
A9
A8
A19
RFU
WE#
RST#
RFU
RFU
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Note:
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
1. RFU = reserved for future use.
8
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© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Signal Assignments
Figure 3: 48-Ball TFBGA 160ET/B
1
2
3
4
5
6
6
5
4
3
2
1
A
A
A3
A7 RY/BY# WE#
A9
A13
A13
A9
WE# RY/BY# A7
A3
B
B
A4
A17
RFU
RST#
A8
A12
A12
A8
RST#
RFU
A17
A4
C
C
A2
A6
A18
RFU
A10
A14
A14
A10
RFU
A18
A6
A2
D
D
A1
A5
RFU
A19
A11
A15
A15
A11
A19
RFU
A5
A1
E
E
A0
D0
D2
D5
D7
A16
A16
D7
D5
D2
D0
A0
F
F
CE#
D8
D10
D12
D14 BYTE#
BYTE# D14
D12
D10
D8
CE#
G
G
OE#
D9
D11
VCC
D13 D15/A-1
D15/A-1 D13
VCC
D11
D9
OE#
H
H
VSS
D1
D3
D4
D6
VSS
VSS
Top view – ball side down
Note:
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
D6
D4
D3
D1
VSS
Bottom view – ball side up
1. RFU = reserved for future use.
9
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© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Signal Assignments
Figure 4: 64-Ball FBGA 160ET/B
1
2
3
4
5
6
7
8
8
7
6
5
4
3
2
1
A
A
RFU
A3
A7 RY/BY# WE#
A9
A13
RFU
RFU
A13
A9
WE# RY/BY# A7
A3
RFU
B
B
RFU
A4
A17 VPP/WP# RST#
A8
A12
RFU
RFU
A12
A8
RST# VPP/WP# A17
A4
RFU
C
C
RFU
A2
A6
A18
RFU
A10
A14
RFU
RFU
A14
A10
RFU
A18
A6
A2
RFU
D
D
RFU
A1
A5
RFU
A19
A11
A15
VCC
VCC
A15
A11
A19
RFU
A5
A1
RFU
E
E
RFU
A0
D0
D2
D5
D7
A16
VSS
VSS
A16
D7
D5
D2
D0
A0
RFU
F
F
VCC
CE#
D8
D10
D12
D14 BYTE# RFU
RFU BYTE# D14
D12
D10
D8
CE#
VCC
G
G
RFU
OE#
D9
D11
VCC
D13 D15/A-1 RFU
RFU D15/A-1 D13
VCC
D11
D9
OE#
RFU
H
H
RFU
VSS
D1
D3
D4
D6
VSS
RFU
RFU
Top view – ball side down
Note:
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
VSS
D6
D4
D3
D1
VSS
RFU
Bottom view – ball side up
1. RFU = reserved for future use.
10
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© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Signal Descriptions
Signal Descriptions
The table below is a comprehensive list of signals for this device family. All signals listed
may not be supported on this device. See Signal Assignments for information specific to
this device.
Table 3: Signal Descriptions
Name
Type
Description
A[MAX:0]
Input
Address: Selects the cells in the memory array to access during READ operations. During
WRITE operations, controls the commands sent to the command interface of the program/
erase controller.
CE#
Input
Chip enable: Activates the memory, enabling READ and WRITE operations. When CE# is
HIGH, all other pins are ignored.
OE#
Input
Output enable: Controls the bus READ operation of the memory.
WE#
Input
Write enable: Controls the bus WRITE operation of the command interface.
BYTE#
Input
Byte/word organization select: Switches between x8 and x16 bus modes. When BYTE# is
LOW, the device is in x8 mode; when HIGH, the device is in x16 mode.
RST#
Input
Reset/block temporary unprotect: Applies a hardware reset to the memory or temporarily
removes protection from all blocks that have been protected. A hardware reset is achieved
by holding RST# LOW for at least tPLPX. When RST# goes HIGH, the memory is ready for
READ and WRITE operations after tPHEL or tRHEL, whichever occurs last.
Holding RST# at VID temporarily unprotects the protected blocks so that PROGRAM and
ERASE operations are possible on all blocks. The transition from HIGH to VID must be slower
than tPHPHH.
DQ[7:0]
I/O
Data I/O: Outputs the data stored at the selected address during READ operations. During
WRITE operations, represents the commands sent to the command interface of the program/
erase controller.
DQ[14:8]
I/O
Data I/O: Outputs data stored at the selected address during a READ operation when BYTE#
is HIGH. When BYTE# is LOW, these pins are not used and are High-Z. During a WRITE operation, the command register does not use these bits. When reading the status register, these
bits should be ignored.
DQ15/A-1
I/O
Data I/O or address input: When BYTE# is HIGH, this pin behaves as a data I/O pin,
DQ[14:8]. When BYTE# is LOW, this pin behaves as an address pin; DQ15/A-1 LOW selects the
LSB of the word on the other addresses, DQ15/A-1 HIGH selects the MSB. Throughout the
text, consider references to data I/O to include this pin when BYTE# is HIGH and consider references to address inputs to include this pin when BYTE# is LOW, except when stated explicitly otherwise.
RY/BY#
Output
Ready/busy: Open-drain output that can be used to identify when the device can be read.
RY/BY# is High-Z during read, auto select, and erase suspend modes. After a hardware reset,
a READ or WRITE operation cannot begin until RY/BY# becomes High-Z.
During a PROGRAM or ERASE operation, RY/BY# is LOW and remains LOW during READ/
RESET commands or hardware resets until the memory is ready to enter read mode.
The use of an open-drain output enables the RY/BY# pins from several memory devices to be
connected to a single pull-up resistor. A LOW indicates that one or more of the devices is
busy.
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
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16Mb: 3V Embedded Parallel NOR Flash
Signal Descriptions
Table 3: Signal Descriptions (Continued)
Name
Type
VCC
Supply
Supply voltage: Provides the power supply for device operations. The command interface is
disabled when VCC
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